Photoluminescence study of excess carrier spillover in 1.3 μm wavelength strained multi-quantum-well InGaAsP/InP laser structures

Abstract

Photoluminescence of 1.3 μm wavelength strained multiple quantum well InGaAsP/InP laser structures has been used to understand the excess carrier redistribution between the quantum well and waveguide regions at a high level of excitation. A model is developed to describe the experimental results. The model suggests that space charge barriers play a significant role in the electron confinement in quantum wells at the high excitation range typical of laser diode operation.