Effects of rf Power and Substrate Temperature on Properties of a-SiN_x:H Films Prepared by Glow-Discharge of SiH₄–N₂–H₂

Abstract

Amorphous SiN x :H films were prepared by the rf glow-discharge of gaseous mixtures of SiH 4 –N 2 –H 2 at various substrate temperatures and rf power densities. The nitrogen and hydrogen contents of the films were determined from the intensities of the IR absorption due to vibrations of Si–N bonds and Si–H bonds. The effects of these deposition parameters on the properties of the amorphous films are discussed on the basis of the variation of the composition and structure of the films.