High active carrier concentration in n-type, thin film Ge using delta-doping

Abstract

We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10[superscript 20]cm[superscript −3], and uniform activated dopant concentrations above 4 × 10[superscript 19]cm[superscript −3] in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of phosphorus diffusion source is shown.