Reversible 300 K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

Abstract

Reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor, Co2+:ZnO, is achieved by lattice incorporation and removal of the native n-type defect, interstitial Zn, resulting in “off” and “on” states (Figure, red triangles and blue circles). Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results suggest new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin-based electronics devices. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2004/c0456_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.