Efficient sprayed In2O3 : Sn <i>n</i>-type silicon heterojunction solar cell

Abstract

We present results concerning In2O3 (tin-doped) n-type silicon heterojunction solar cell. The transparent and conductive In2O3 : Sn layer was made using a very simple, cheap, and quick method. Conversion efficiency up to 10% is reported. Typical parameters under AM1 simulated sunlight are open-circuit photovoltage Voc=500 mV, short-circuit photocurrent Isc=32 mA cm−2, and fill factors around 0.6–0.65.