Towards terahertz operation of CMOS

Abstract

This paper reports a new polysilicon gate separated Schottky barrier diode structure (PGS SBD) which enables operation of receivers at frequencies higher than that limited by the transistors; examples of the building blocks with on-chip antennas operating at 100 to 400 GHz, which suggest the use of CMOS in THz applications; and a potential path to realize 1 THz operation in CMOS.