Semiconductor Science and Technology · 2008 · 32 citations · 20 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsGallium NitrideOptical PropertiesPhotoluminescence In Quantum WellsQuantum Well GrowthQuantum Well HeterostructuresQuantum Well StructuresSurface Optical PropertiesTemperature Profiles
We report the effect of different temperature profiles on the quality of the InGaN/GaN multiple quantum well (MQW) structures by employing photoluminescence (PL) and atomic force microscopy (AFM). We adopted a two-step varied-barrier-growth temperature method to improve the structural and optical properties of the InGaN/GaN MQW layers. The low-temperature GaN barrier layer was introduced to reduce the desorption rate of the indium atoms of the InGaN well, and then the high-temperature GaN barrier was grown to reduce the defects of InGaN/GaN MQWs. When the width of the low-temperature GaN barrier was 50 Å and the high-temperature GaN barrier was grown at 1000 °C, the defect and surface roughness were significantly reduced, especially with a reduction in the depth of V-defect as low as 20 Å.
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Solid phase immiscibility in GaInN
I. H. Ho, G. B. Stringfellow · Applied Physics Letters · 1996 · 1K citations