Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection

TLDR

The study demonstrates continuous‑wave lasing at room temperature in a GaN‑based VCSEL driven by current injection. The VCSEL was built with a two‑pair InGaN/GaN quantum‑well active region, a 7‑λ GaN cavity with an ITO p‑contact between SiO₂/Nb₂O₅ Bragg mirrors, bonded to a Si substrate after laser lift‑off of the sapphire. Under continuous‑wave operation, the 8‑µm aperture device achieved a 7.0‑mA threshold and emitted at approximately 414 nm.

Abstract

We report the demonstration of CW lasing at room temperature in a GaN-based vertical-cavity surface-emitting laser (VCSEL) by current injection. The active region of the VCSEL consisted of a two-pair InGaN/GaN quantum well active layer. The optical cavity consisted of a 7-λ-thick GaN semiconductor layer and an indium tin oxide layer for p-contact embedded between two SiO2/Nb2O5 dielectric distributed Bragg reflectors. The VCSEL was mounted on a Si substrate by wafer bonding and the sapphire substrate was removed by laser lift-off. Under CW operation for an 8-µm aperture device, the threshold current was 7.0 mA and the emission wavelength was approximately 414 nm.