Coulomb interactions in Al doped FeSi at low temperatures

Abstract

Abstract A metal‐insulator transition is observed in Al doped FeSi. For samples in the metallic region, a T 1/2 contribution to the low temperature conductivity is found. An analysis based on the Coulomb interaction model in disordered systems is presented to explain this behavior. It is shown that the sum of Coulomb interactions and localization theories yields the best description of the results.