Applied Physics Letters · 2008 · 288 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser Host MaterialsLaser OpticsLaser PhysicsOptical SourcesSemiconductor LasersWide-bandgap Semiconductor DevicesCurrent InjectionDistributed Bragg Reflector LasersLaser LinewidthLinewidth NarrowingMicrocavity LasersPolarizationReflectivityVertical-cavity Surface-emitting Lasers
The study reports continuous‑wave operation of an electrically pumped GaN‑based VCSEL. The VCSEL consists of a ten‑pair InGaN/GaN multiple quantum well active region embedded in a 5λ GaN hybrid microcavity bounded by an epitaxial AlN/GaN DBR and a Ta₂O₅/SiO₂ dielectric DBR. Continuous‑wave lasing was achieved at 77 K with a 1.4 mA threshold, emitting 462 nm light with a 0.15 nm linewidth, 11.7° divergence, 80% polarization, and a spontaneous coupling efficiency of 7.5 × 10⁻².
Here, we report the cw laser operation of electrically pumped GaN-based vertical cavity surface emitting laser (VCSEL). The GaN-based VCSEL has a ten-pair InGaN∕GaN multiple quantum well active layer embedded in a GaN hybrid microcavity of 5λ optical thickness with two high reflectivity mirrors provided by an epitaxially grown AlN∕GaN distributed Bragg reflector (DBR) and a Ta2O5∕SiO2 dielectric DBR. cw laser action was achieved at a threshold injection current of 1.4mA at 77K. The laser emitted a blue wavelength at 462nm with a narrow linewidth of about 0.15nm. The laser beam has a divergence angle of about 11.7° with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5×10−2 was measured.
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Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities
Takao Someya, Ralph Werner, A. Forchel et al. · Science · 1999 · 261 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17