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Thermal dynamics of VO2 films within the metal–insulator transition: Evidence for chaos near percolation threshold
31
Citations
8
References
2000
Year
EngineeringThermal DynamicsSemiconductorsElectronic DevicesBolometric PerformanceMaterials SciencePhysicsNanotechnologyOxide ElectronicsThermal Excitation SpectroscopyLayered MaterialSolid-state PhysicMetal–insulator TransitionVo2 FilmsElectronic MaterialsSurface ScienceApplied PhysicsCondensed Matter PhysicsThin Films
The thermal dynamics of thin vanadium dioxide films at the martensitic metal–insulator phase transition has been evaluated experimentally by thermal excitation spectroscopy. Over the transition region, the device becomes highly nonlinear, and its bolometric performance is affected. At low thermal cycling rates for a temperature around the percolation threshold, the device stochastically switches into an unusual pattern. The originally smooth and monotonic shape of the R(T) curve for minor loops suddenly becomes unstable and unpredictable. By direct observation of at least two strange attractors, the phenomenon clearly has been identified as chaotic. Bolometric performance of VO2 based devices in the transition region may suffer strong degradation for low thermal cycling rates. In this region, sensor responsivity for periodic thermal excitation is significantly reduced. Resistance noise is 1/f-type and self-generated oscillations were observed at frequency <10−2 Hz.
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