Applied Physics Letters · 2012 · 26 citations · 15 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMagnetic MaterialsMaterials PhysicsAntiferromagnetismMagnetic Properties Of SolidsMagnetic SusceptibilityMagnetism In SolidsMemristive MaterialsPhase TransitionsElectrical ResistivityElectrical Resistivity AnalysisLattice ParametersNon-volatile MemoryNonvolatile Memory MaterialsResistive SwitchingResistive Switching MaterialsSpecific Heat Capacity
A resistive-switching phenomenon driven by antiferromagnetic phase separation is observed for a manganese nitride Mn3ZnN, which crystallizes in the antiperovskite structure. Measurements of the lattice parameters, magnetic susceptibility, electrical resistivity, and specific heat from 2 K to 300 K reveal antiferromagnetic phase separation that appears below a temperature of approximately 190 K. The mechanism of the phase separation is highly complicated; nevertheless the accompanying resistive-switching phenomenon is useful for non-volatile memory applications.
15
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations
Natural Sciences, Materials Engineering, Materials Science +12
Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
Natural Sciences, Electrical Engineering, Materials Science +17
Programmable polymer thin film and non-volatile memory device
Jianyong Ouyang, Chih‐Wei Chu, Charles R. Szmanda et al. · Nature Materials · 2004 · 880 citations
Natural Sciences, Materials Engineering, Materials Science +14
Who Wins the Nonvolatile Memory Race?
G. I. Meijer · Science · 2008 · 529 citations