Resistive switching phenomenon driven by antiferromagnetic phase separation in an antiperovskite nitride Mn3ZnN

Abstract

A resistive-switching phenomenon driven by antiferromagnetic phase separation is observed for a manganese nitride Mn3ZnN, which crystallizes in the antiperovskite structure. Measurements of the lattice parameters, magnetic susceptibility, electrical resistivity, and specific heat from 2 K to 300 K reveal antiferromagnetic phase separation that appears below a temperature of approximately 190 K. The mechanism of the phase separation is highly complicated; nevertheless the accompanying resistive-switching phenomenon is useful for non-volatile memory applications.