Applied Physics Letters · 1995 · 132 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthNanostructured Electronic MaterialsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor NanomaterialsIsland Size EffectsMolecular Beam EpitaxyMonolayersNanoscale HeterostructuresNanostructured Optoelectronic MaterialsSemiconductor Nanostructures
We have prepared small InP islands which are embedded in In0.485Ga0.515P grown on a (100) GaAs substrate by solid-source molecular beam epitaxy. The InP islands form due to the 3.7% lattice mismatch between In0.485Ga0.515P and InP. Atomic force microscopy measurements show that the island size is typically ∼50 nm in diameter and ∼5 nm in height for nominally two monolayers of InP deposited on In0.485Ga0.515P. The energy of the photoluminescence (PL) peak shifts from 1.85 to 1.53 eV as the nominal InP thickness increases from 2 to 10 monolayers. A minimum PL linewidth of 21.6 meV and the maximum intensity of the PL originating from the InP islands is observed for 7.3 monolayers InP.