Heterogeneous Integrated III–V Laser on Thin SOI With Single-Stage Adiabatic Coupler: Device Realization and Performance Analysis

Abstract

A III-V on silicon heterogeneous integrated laser with highly efficient single-stage adiabatic coupler is presented in this paper. The structure consists of an electrically pumped III-V ridge waveguide gain section on silicon, III-V/Si optical adiabatic coupler, and silicon-on-insulator (SOI) nanophotonic waveguide. The adiabatic coupler is 50-μm long and is formed by tapering the III-V ridge and the underneath thin SOI waveguide along the same direction for efficient coupling of light between III-V ridge and silicon waveguide. Fabrication details and characterizations of this heterogeneous III-V/Si Fabry-Pérot (FP) laser are presented. Experimental data show that such structure has a low taper end reflection of ~-37 dB, and a high optical coupling efficiency of ~85%. The fabricated FP laser shows a high differential quantum efficiency of 23.78% under pulse operation at room temperature. The maximal single facet emitting power is about 7.5 mW, and the side-mode suppression ratio is ~30 dB. Thermal characterization shows a length normalized thermal independence of 20.02 °C·mm/W. Since this new heterogeneously integrated III-V/Si laser structure is realized directly on thin SOI, it offers a potential solution for developing more complex, efficient, and scalable integrated on-chip subsystems for various applications.