Energy Band Structures of Four Polytypes of Silicon Carbide Calculated with the Empirical Pseudopotential Method

Abstract

Abstract The electronic band structures of four polytypes of silicon carbide (3C, 2H, 4H, 6H) are calculated with the aid of local atomic pseudopotentials for carbon and silicon. The same pseudopotentials are used in all four polytypes. A description is given of the basic assumptions in the empirical pseudopotential method. A computer program is used which is able for symmetric k ‐values to reduce the dimensionality of matrices. The calculated energy band structures are in satisfactory agreement with well‐established experimental data.