Reduction of elastic strains in directly-bonded silicon structures

Abstract

The elastically strained state of the interface in directly-bonded silicon structures has been studied by x-ray diffraction topography and IR spectrometry. The pattern of the contrast observed in the x-ray topographs and the intensity oscillations in the IR spectra indicate a periodic strain distribution caused by the long-period surface microroughness on the plates to be bonded. The local microroughness did not exceed 2 Å, and it did not noticeably affect the interface structure. Two types of the structure were subjected to a comparative analysis, (i) with a smooth interface prepared by standard direct-bonding technology, and (ii) with an interface displaying a regular relief. The strain level in type-II structures was found to be lower by more than an order of magnitude. A model is proposed to account for the observed reduction of elastic strains at the bonded sections of the interface in terms of elastic relaxation of the free surfaces in the relief voids through their deflection and displacement.