IEEE Transactions on Applied Superconductivity · 1995 · 18 citations · 11 references
EngineeringElectrical EngineeringPhysicsMicrowave EngineeringSemiconductor DevicesThin FilmsHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave MixersMicrowave Semiconductor DevicesSuperconducting MaterialsSuperconducting Thin FilmsBandwidthBandwidth AnalysisElectron HeatingHigh-frequency ElectronicsHigh-temperature Device OperationHigh-temperature SuperconductorsMixer CircuitsNbn Thin Films
Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Submillimeter receivers for radio astronomy
R. Blundell, Edward Tong · Proceedings of the IEEE · 1992 · 128 citations