Applied Physics Letters · 1992 · 44 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceCondensed Matter PhysicsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsSuperconducting MaterialsSuperconducting Thin FilmsCritical Current DensityCurrent DensityCurrent-voltage RelationsDissipationGainHigh-temperature SuperconductorsPower GainThin-film Superconductors
The source-drain voltage-current characteristics of a high Tc field-effect device consisting of a YBa2Cu3O7−x/SrTiO3/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 Å thick YBa2Cu3O7−x channel layer (Tc=43 K) with a high critical current density Jc (5 K) over 1×105 A/cm2. A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.
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Influence of electric fields on pinning in YBa_{2}Cu_{3}O_{7-δ} films
J. Mannhart, Darrell G. Schlom, J. G. Bednorz et al. · Physical Review Letters · 1991 · 188 citations
Electric field effect on superconducting YBa2Cu3O7?? films
J. Mannhart, J. G. Bednorz, K. A. M�ller et al. · The European Physical Journal B · 1991 · 149 citations