High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

Abstract

High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm -1 and 35 A cm -2 , respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%.