Acceptor activation of Mg-doped GaN by microwave treatment

Abstract

A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium–hydrogen bonding due to the microwave energy absorption.