Silicon intercalation at the interface of graphene and Ir(111)

Abstract

We report on the structural and electronic properties in the heterostructure of graphene/silicon/Ir(111). A (√19 × √19)R23.41° superstructure is confirmed by low energy electron diffraction and scanning tunneling microscopy and its formation is ascribed to silicon intercalation at the interface between the graphene and the Ir(111) substrate. The dI/dV measurements indicate that the interaction between graphene and Ir is effectively decoupled after silicon intercalation. Raman spectroscopy also reveals the vibrational states of graphene, G peak and 2D peak, which further demonstrates that the silicon-buffered graphene behaves more like intrinsic graphene.