Solution-processed poly(3-hexylthiophene) vertical organic transistor

Abstract

The fabrication and operation of a solution-processed vertical organic transistor are now demonstrated. The vertical structure provides a large cross section and a short channel length to counter the inherent limitations of the organic materials. The operation of a vertical organic transistor relies on a transition metal oxide layer, V2O5, to lower the carrier injection barrier at the organic/metal interface. The effect of the oxide thickness was examined to verify the role of transition metal oxide in device operation. By studying the device performance at different temperatures and in solvent environments, an operating mechanism that occurs via an ion drift and doping process was proposed. The drift direction of the dissolved Li+ ion can be controlled by altering the gate voltage bias in order to change the carrier injection barrier.