Physical Review · 1954 · 113 citations · 17 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsRecombinationSolid State PhysicsDefect ThermodynamicsDefects In Electronic MaterialsDislocation TheoryDislocations In SemiconductorsSemiconductor DefectsThermal Properties Of SemiconductorsAnnealingAnnealing EffectsAnnealing Temperature EffectsBimolecular ReactionsCritical TemperatureFrenkel DefectsHeat Treatment EffectsInterstitials
Annealing experiments on the thermal acceptors quenched into germanium by rapid cooling from high temperatures are used to deduce information about vacancies and interstitials in germanium. Annealing is studied at a series of temperatures and a critical temperature is found at 516\ifmmode^\circ\else\textdegree\fi{}C. Above 516\ifmmode^\circ\else\textdegree\fi{}C, the annealing curves suggest a bimolecular recombination process implying that the heat treatment produces comparable numbers of vacancies and interstitials (Frenkel defects) which disappear by mutual annihilation. Below 516\ifmmode^\circ\else\textdegree\fi{}C, the data can be explained by a model in which interstitials are trapped near dislocations before much recombination can occur with vacancies. As a result of these experiments and their interpretation, interstitials are believed to be more mobile than vacancies below, and possibly above, 516\ifmmode^\circ\else\textdegree\fi{}C.
17
Dislocations and Plastic Flow in Crystals
Alan Cottrell, D. L. Dexter · American Journal of Physics · 1954 · 2.7K citations
Isothermal Annealing Effects in Irradiated Copper
A. W. Overhauser · Physical Review · 1953 · 161 citations
Natural Sciences, Materials Science, Electronic Materials +13
Plastic Deformation of Germanium and Silicon
C. J. Gallagher · Physical Review · 1952 · 123 citations
Natural Sciences, Materials Engineering, Materials Science +17