Role of dopants in pressure-induced effects in glassy GeSe_3·5 containing Bi and Sb

Abstract

Abstract The Bridgman anvil high-pressure technique has been used to investigate the role of dopants in pressure-induced effects in the electrical resistivities of amorphous (GeSe3·5)100-xMx (M = Bi, Sb). The results for Sb-doped glasses are found to be entirely different from those of Bi-doped glasses. This difference is discussed on the basis of the presence of different types of molecular units in the two glassy systems.