Monitoring of amorfization of the oxygen implanted layers in silicon wafers using photothermal radiometry and modulated free carrier absorption methods

Abstract

This paper presents experimental results that characterize implanted layers in silicon being the result of a high energy implantation of O+6 ions. We propose a simple relation between attenuation of photothermal radiometry and/or modulated free carrier absorption amplitudes, the implanted layer thickness and its optical absorption coefficient. The thickness of the implanted layers was determined from capacitance–voltage characteristics and computations with the TRIM program. The obtained results allowed to estimate changes of the optical absorption coefficient of the oxygen implanted layers indicating the amorfization of the layers.