High quality epitaxy of YBa2Cu3O7−<i>x</i> on silicon-on-sapphire with the multiple buffer layer YSZ/CeO2

Abstract

High quality YBa2Cu3O7−x films on silicon-on-sapphire were grown using a multiple buffer layer, consisting of YSZ and CeO2. Ion channeling reveals the high crystalline perfection of the YBa2Cu3O7−x films. A channeling minimum yield for the Ba signal as low as 3% was measured. The normal state resistivity of 200 μΩ cm at 300 K, critical temperatures above 90 K, with transition widths down to 0.5 K, critical current densities above 2×106 A/cm2 at 77 K and surface resistance values of 1.4 mΩ at 18.9 GHz and 77 K confirm the high quality of the YBa2Cu3O7−x films. These results are very promising for integrated superconductor and semiconductor applications.