Applied Physics Letters · 1993 · 58 citations · 12 references
Materials ScienceSemiconductorsSuperconducting MaterialHigh-tc SuperconductivityEngineeringHigh QualityMultiple Buffer LayerOxide ElectronicsHigh Quality EpitaxyApplied PhysicsSuperconductivityCondensed Matter PhysicsHigh Tc SuperconductorsYba2cu3o7−x FilmsSemiconductor MaterialThin FilmsMolecular Beam EpitaxyEpitaxial Growth
High quality YBa2Cu3O7−x films on silicon-on-sapphire were grown using a multiple buffer layer, consisting of YSZ and CeO2. Ion channeling reveals the high crystalline perfection of the YBa2Cu3O7−x films. A channeling minimum yield for the Ba signal as low as 3% was measured. The normal state resistivity of 200 μΩ cm at 300 K, critical temperatures above 90 K, with transition widths down to 0.5 K, critical current densities above 2×106 A/cm2 at 77 K and surface resistance values of 1.4 mΩ at 18.9 GHz and 77 K confirm the high quality of the YBa2Cu3O7−x films. These results are very promising for integrated superconductor and semiconductor applications.
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High critical currents in strained epitaxial YBa2Cu3O7−δ on Si
D. K. Fork, D. B. Fenner, R. Barton et al. · Applied Physics Letters · 1990 · 254 citations
Materials Science, Epitaxial Growth, High-tc Superconductivity +12