Philosophical magazine · 1977 · 59 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsDefects In Electronic MaterialsDeformation MechanismsDislocation MechanicsElectron MicroscopySemiconductor DefectsStacking FaultsDislocation PhysicsDislocation SubstructuresDislocationsElectron Microscopy Of Stacking FaultsStacking Faults In Semiconductors
Abstract Under suitable imaging conditions using the weak-beam method of electron microscopy, constrictions in the stacking faults of dislocations in Ge become clearly visible. After deformation at relatively low temperatures they occur at an average separation of 950 Å. In short segments they reduce the width of the stacking fault.
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Theory of Dislocation Mobility in Semiconductors
V. Celli, M. N. Kabler, T. Ninomiya et al. · Physical Review · 1963 · 265 citations
Dissociation of near-screw dislocations in germanium and silicon
Ariel Gómez, D. J. H. Cockayne, P. B. Hirsch et al. · Philosophical magazine · 1975 · 138 citations
Natural Sciences, Materials Engineering, Materials Science +13