Physicochemically Stable Polymer‐Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications

Abstract

Abstract A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane‐terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic‐oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS‐coupled SiO 2 or AlO x dielectrics, various vacuum‐ and solution‐processable organic semiconductors can develop highly ordered crystalline structures that provide higher field‐effect mobilities ( μ FET s) than other surface‐modified systems, and negligible hysteresis in organic field‐effect transistors (OFETs). In particular, the use of PS‐coupled AlO x nanodielectrics enables a solution‐processable triethylsilylethynyl anthradithiophene OFET to operate with μ FET ∼ 1.26 cm 2 V −1 s −1 at a gate voltage below –1 V. In addition, a complementary metal‐oxide semiconductor‐like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS‐coupled SiO 2 dielectric.