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Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers
22
Citations
19
References
2002
Year
EngineeringColloidal NanocrystalsSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorQuantum DotsQuantum MaterialsCdte LayersNanoscale ScienceCompound SemiconductorMaterials SciencePhotoluminescencePhysicsNanotechnologyOptoelectronic MaterialsFormation MechanismZnte BarriersSemiconductor MaterialZnte Thin FilmsNanomaterialsApplied PhysicsThin FilmsOptoelectronics
Photoluminescence spectra showed that the formation mechanism for CdTe layers grown on ZnTe thin films changed from a two-dimensional mode to a three-dimensional mode with increasing submonolayer CdTe layer thickness, and the temperature-dependent PL spectra indicated that the activation energy of CdTe quantum dots is larger than that of CdTe single quantum wells. The formation mechanism for the CdTe QDs is in reasonable agreement with a Stranski–Krastanov growth mode.
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