Logarithmic gain/current-density characteristic of InGaAs/InGaAlAs/InP multi-quantum-well separate-confinement-heterostructure lasers

Abstract

The threshold current density of InGaAs/InGaAIAs/InP SCH MQW lasers with various cavity lengths and numbers of wells has been measured. The gain of each well depends logarithmically on current density from 200 to at least 2000 A cm−2. Curves are presented for optimising the number of wells. Comparisons are made with GaAs/AIGaAs MQW lasers.