Studies of phosphorus Gaussian profile emitter silicon solar cells

Abstract

Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies ( 21.60-21.74%) with doping levels s = 1x10 19 -5x10 18 (cm -3 ) and (1.2-2.0) m emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency ( = 21.82-21.92%), with Ns = 1x10 20 (cm -3 ) with 2.0 m thickness under metal-contacted surface and Ns = 1x10 19 -5x10 18 (cm -3 ) with (1.2-2.0) m thickness range, (sheet resistance range 90-100 / ) under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable.