Hole transport through single and double SiGe quantum dots

Abstract

We report on measurements of hole transport through a double quantum dot structure formed by trench isolation from a SiGe:Si heterostructure. A period change in the Coulomb oscillations is observed upon changing a gate bias, which is attributed to the lowering of one of the tunnel barriers, effectively changing the device to a single quantum dot. Accompanying the period change is a significant change in the level of noise associated with the oscillations. This is explained by a carrier energy filtering effect in the double dot compared with the single dot, caused by the slight difference in energy level spacing in each quantum dot.