50-Gb/s silicon modulator using 250-µm-Long phase shifter based-on forward-biased pin diodes

Abstract

We present a 50-Gb/s silicon Mach-Zehnder modulator that uses the shortest 250-μm long phase shifter. A 4.2-dB extinction ratio was obtained at 50 Gb/s with 4.35 V peak-to-peak (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> ) driving signals and 45-mW power consumption.