Analysis and design aspects of a desaturation detection circuit for low voltage power MOSFETs

Abstract

An analysis of a desaturation detection circuit specially designed for low voltage power MOSFETs is presented and design aspects are carried out. The characteristics are a low detection threshold hysteresis, a fast shutdown reaction and a junction temperature compensation. The proposed desaturation detection circuit is described in detail and experimental results are given. The influence of the junction temperature and stray inductances of the package leads on the short circuit detection threshold are pointed out.