Electron and hole transport in bismuth

Abstract

Measurements of the low field galvanomagnetic tensor components of bismuth from 77 to 300K are reported. The eight magnetoresistivity coefficients /b A//sub ij/ are found to vary as /b T//sup -2 / up to nearly 120 K, then as /b T//sup -3.9/ from 120 to 300 K. The electronic parameters are computed. The values of the electron ellipsoid tilt angle lie between 6 degrees 40' and 8 degrees 30' and the carrier density varies from 4.55*10/sup 17/ to 24.5*10/sup 17/ cm/sup -3/ at 77 K and 300 K respectively. All mobilities except mu /sub 2/ vary as /b T/ /sup -2/ in the lowest temperature range.