Concepedia

Heteroepitaxial Growth of Tungsten Carbide Films on W(110) by Plasma-Enhanced Chemical Vapor Deposition

Masahiro Katoh, Hiroshi Kawarada

Japanese Journal of Applied Physics · 1995 · 12 citations · 6 references

DOI

Concepts

Abstract

Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (0001)WC|| (110)W in the alignment [1\bar210]WC|| [\bar111]W.

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