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Temperature dependence of tunneling magnetoresistance: Double-barrier versus single-barrier junctions
13
Citations
14
References
2002
Year
MagnetismSpintronicsSpin Coherence LengthEngineeringSpin DynamicPhysicsTunneling MicroscopyNatural SciencesApplied PhysicsMagnetic ResonanceCondensed Matter PhysicsTemperature DependenceDouble-barrier Tunnel JunctionsTmr ValuesMagnetic MaterialsMagnetoresistanceQuantum Magnetism
The temperature dependence of tunneling magnetoresistance (TMR) is studied for spin valve type double-barrier tunnel junctions. Normalized TMR values for double-barrier tunnel junctions (DBTJs) and single-barrier junctions (SBTJs) are plotted as functions of temperature and it is found that the DBTJ shows stronger temperature dependence of TMR than the SBTJ. The strong temperature dependence of TMR for the DBTJ is explained in terms of temperature dependence of the spin polarization of the middle magnetic layer and decrease of the spin coherence length with increasing temperature.
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