Publication | Open Access
Centrosymmetric PbTe∕CdTe quantum dots coherently embedded by epitaxial precipitation
100
Citations
19
References
2006
Year
Materials ScienceIi-vi SemiconductorEpitaxial PrecipitationEngineeringPhysicsPbte∕cdte Quantum DotsApplied PhysicsQuantum MaterialsQuantum DotsSymmetric Quantum DotsOptoelectronic DevicesFormation ProcessQuantum Photonic DeviceCoherent ProcessNanocrystalline MaterialOptoelectronicsCompound SemiconductorNanophotonics
A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach, the formation of the quantum dots is induced by a transformation of an epitaxial two dimensional quantum well into an array of isolated precipitates with dimensions of about 25nm. The formation process is driven by the immiscibility of the constituent materials resulting from their different lattice structures. The investigated PbTe∕CdTe heterosystem combines two different cubic lattices with almost identical lattice constants. Therefore, the precipitated quantum dots are almost strain-free and near thermodynamic equilibrium they exhibit the shape of small-rhombo-cubo-octahedrons. The PbTe∕CdTe quantum dots, grown on GaAs substrates, display intense room temperature luminescence at wavelength of around 3.2μm, which makes them auspicious for applications in midinfrared photonic devices.
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