Record low-threshold index-guided InGaAs/GaAlAsvertical-cavitysurface-emitting laser with a native oxide confinement structure

Abstract

An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70 µA was achieved with a 5 µm-diameter core device. The proposed structure provides strong electrical and optical confinements. Also a reduction in nonradiative recombination and an improvement in the thermal resistance can be expected.