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<title>Exciton optical absorption in a diffusion-induced nonsquare AlGaAs/GaAs quantum well</title>
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1992
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Wide-bandgap SemiconductorOptical MaterialsEngineeringSemiconductorsOptical PropertiesCompound SemiconductorQuantum SciencePhotonicsElectrical EngineeringPhotoluminescencePhysicsExciton Optical AbsorptionOptoelectronic MaterialsCategoryiii-v SemiconductorParabolic BandExciton HamiltonianApplied PhysicsQuantum Photonic DeviceOptoelectronicsDipole Matrix Elements
The polarization dependent exciton ground state optical absorption in a diffusion induced AlGaAs/GaAs undoped non-square single quantum well has been calculated. The exciton Hamiltonian is expressed in the effective mass approximation using a separable enveloped function to determine both the electron and hole subbands and the 1S-like hydrogenic wavefunction for the coulombic interaction. The k(DOT)p approach is used, assuming a parabolic band without mixing, to obtain the dipole matrix elements, which are then used to determine the TE and TM absorption coefficients.