Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure

Abstract

We report the dependence of the second-harmonic spectrum of Si(001) metal-oxide-semiconductor structures on applied bias in the vicinity of the direct two-photon ${E}_{1}$ transition. Bulk nonlinear electroreflectance contributions peak at 3.37 eV; the surface dipole contribution peaks at 3.26 eV.