Strained-layer quantum-well injection laser

Abstract

Data are presented demonstrating room-temperature operation of a strained-layer quantum-well injection laser. The laser structure, grown by molecular beam epitaxy, consists of an active region with three InxGa1−xAs (x∼0.35) quantum wells (LZ ∼40 Å) separated by two GaAs barriers (LB ∼30 Å). These layers are centered in a larger GaAs collection/confinement region (LZ ∼1600 Å) bounded by AlyGa1−yAs ( y∼0.45) cladding layers. The lasers operate at λ∼1.0 μm with greater than 4-mW optical power output/facet under pulsed conditions at 300 K. Threshold current densities between 1000 and 2000 A/cm2 are obtained.