Large-scale Si_1−<i>x</i>Ge_<i>x</i> quantum dot arrays fabricated by templated catalytic etching

Abstract

Templated catalytic etching has been developed as an effective method for preparing highly ordered, wafer scale Si1−xGex quantum dot arrays on an Si substrate. Process parameters including etching time, etching temperature, and the diameter and dosage of polystyrene spheres can be independently adjusted to control the dot size, inter-dot space, and dot arrangement mode. Photoluminescence characterization indicates a remarkable enhancement of the luminescence intensity, showing potential for future optoelectronic applications.