Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1995 · 16 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureMaterials PhysicsSolid State PhysicsCrystal GrowthCrystalline MaterialsCrystallization ProcessesFerroelectric MaterialsPerovskite MaterialsPiezoelectric MaterialsCzochralski Crystal GrowthCzochralski GrowthPiezoelectric CrystalsPiezoelectric EffectPiezoelectric PropertiesPiezoelectric Single CrystalsPiezoelectricitySingle-crystal Piezoelectrics
Single crystals of La<SUB>3</SUB>Ga<SUB>5</SUB>SiO<SUB>14</SUB> were grown from the melt using the Czochralski technique. The mechanism of formation of most peculiar defects in La<SUB>3</SUB>Ga<SUB>5</SUB>SiO<SUB>14</SUB> crystals was studied and the possibility of their suppression by an essential modification of the growth assembly discussed. The piezoelectric behavior of the grown crystals at high temperatures was investigated.