Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−<i>x</i>Si<i>x</i> alloys determined by scanning calorimetry

Abstract

The transition temperatures (Tt) and heats of crystallization (ΔH) of a-Ge, a-Si, and a-Ge1−xSix films deposited by rf sputtering have been measured by differential scanning calorimetry (DSC). Both Tt and ΔH (per gram) increase linearly with x in the alloy system. Overlapping exothermic multiple peaks are observed in the DSC traces of a-Ge and a-Si samples prepared at high deposition rates, suggesting that multiple amorphous configurations may coexist in these materials.