Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light‐Emitting Diode by Localized Surface Plasmons

Abstract

The electroluminescence intensity of a silicon quantum dot (Si QD) light-emitting diode (LED) with an Ag layer containing Ag particles can be enhanced by 434% relative to a Si QD LED without an Ag layer. The large enhancement is attributed to an increase in radiative quantum efficiency as a result of coupling between Si QDs and localized surface plasmons and increased current injection efficiency through improved carrier tunneling into Si QDs.