Publication | Open Access
Low power all-optical bistability in InGaAs-AlInAs superlattices: Demonstration of a wireless self-electro-optical effect device operating at 1.5 μm
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Citations
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References
1994
Year
Optical MaterialsEngineeringPositive Feedback MechanismOptoelectronic DevicesOptical AmplifierLow TemperatureSemiconductorsElectronic DevicesOptical Transmission BistabilityOptical PropertiesQuantum MaterialsOptical SwitchingNanophotonicsPhotonicsElectrical EngineeringQuantum SciencePhysicsIngaas-alinas SuperlatticesTopological HeterostructuresElectro-optics DeviceApplied PhysicsQuantum Photonic DeviceOptoelectronics
We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs-AlInAs superlattice p-i-n structures. Bistability results, in analogy with the self-electro-optical effect device, from a positive feedback mechanism due to the interplay between Wannier–Stark effect, built-in field, and screening by photocarriers.
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