Publication | Closed Access
Deposition of II‐VI Thin Films by LP‐MOCVD Using Novel Single‐Source Precursors
84
Citations
26
References
2003
Year
EngineeringThin Film Process TechnologyChemistryMocvd StudiesChemical DepositionIi-vi SemiconductorCadmium ChalcogenidesThin Film ProcessingThin-film TechnologyMaterials ScienceAbstract Thin FilmsCrystalline DefectsThin Film MaterialsIi‐vi Thin FilmsCrystallographyNanomaterialsSurface ScienceApplied PhysicsThin FilmsChemical Vapor DepositionSolar Cell Materials
Abstract Thin films of several zinc or cadmium chalcogenides have been deposited on glass substrates by low pressure metal‐organic chemical vapour deposition (LP‐MOCVD) using single‐source precursors, [M{(EP i Pr 2 ) 2 N} 2 ] (M = Cd II , Zn II and E = S, Se). X‐ray single crystal structures show that [Zn{(EP i Pr 2 ) 2 N} 2 ] (E = S or Se) and [Zn{(SePPh 2 ) 2 N} 2 ] are tetrahedrally distorted. TGA analyses showed that the precursors are volatile, making them suitable for MOCVD studies. As‐deposited films were polycrystalline as confirmed by X‐ray powder diffraction (XRPD) and their morphologies were studied by scanning electron microscope (SEM). (© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2004)
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