Three dimensional magnetic nanowires grown by focused electron-beam induced deposition

TLDR

Domain‑wall control in magnetic nanowires underpins proposed 3D memory devices, yet conventional lithography makes 3D nanostructure fabrication highly challenging. We demonstrate that focused electron‑beam‑induced deposition produces highly pure 3D magnetic nanowires (aspect ratio ~100) whose magnetisation reverses via domain‑wall nucleation and propagation, and whose switching can be directly probed by magneto‑optical Kerr effect.

Abstract

Control of the motion of domain walls in magnetic nanowires is at the heart of various recently proposed three-dimensional (3D) memory devices. However, fabricating 3D nanostructures is extremely complicated using standard lithography techniques. Here we show that highly pure 3D magnetic nanowires with aspect-ratios of ~100 can be grown using focused electron-beam-induced-deposition. By combining micromanipulation, Kerr magnetometry and magnetic force microscopy, we determine that the magnetisation reversal of the wires occurs via the nucleation and propagation of domain walls. In addition, we demonstrate that the magnetic switching of individual 3D nanostructures can be directly probed by magneto-optical Kerr effect.