Pseudopotential band structure of indium nitride

Abstract

The band structure, density of states and the imaginary part of the dielectric function have been calculated for indium nitride by a pseudopotential method. Comparison with published reflectance data permits the identification of principal optical transitions at the \ensuremath{\Gamma},M,K, and H symmetry points and we have been able to correct previous transition assignments. The calculated long-wavelength refractive index of 2.88\ifmmode\pm\else\textpm\fi{}0.5 compares well with experiment. The material has a direct energy gap at the zone center and the spherically symmetric extrema are well described by scalar effective masses of 0.17${m}_{0}$, 0.5${m}_{0}$ (holes), and 0.12${m}_{0}$ (electrons).